Electrical characteristics of diamond films synthesized from methane/hydrogen and acetone/hydrogen mixtures

Chung-Chih Hung*, George J. Valco, Shashikant M. Aithal, Vish V. Subramaniam

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We present the results of detailed electrical measurements on diamond films grown by hot-filament chemical-vapor deposition. Two different mixtures of reaction species, hydrogen/methane and hydrogen/acetone, were utilized to grow diamond films. The latter is useful for introducing dopants during growth in a relatively safe manner. For the diamond films grown using hydrogen and methane, a high-temperature anneal increased the resistivity of the films by seven orders of magnitude to about 1012 Ω cm while the I-V characteristics retained the same qualitative shape. Further annealing was found to change the I-V characteristics of the film itself, not the contacts. Spatial variation of the electrical characteristics is also reported. In addition, for the diamond films grown using the hydrogen and acetone, a variety of different results was obtained. Electrical measurements and Raman spectroscopy suggest that some areas of these films were high-resistivity diamond while other areas may contain nondiamond carbon at grain boundaries.

Original languageEnglish
Pages (from-to)7109-7119
Number of pages11
JournalJournal of Applied Physics
Volume78
Issue number12
DOIs
StatePublished - 1 Dec 1995

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