Electrical characteristics of an organic bistable device using an Al/Alq3/nanostructured MoO3/Alq3/p +-Si structure

Tzu Yueh Chang; You Wei Cheng; Po-Tsung Lee

doi:10.1063/1.3299265

Electrical characteristics of an organic bistable device using an Al/Alq₃/nanostructured MoO₃/Alq₃/p ⁺-Si structure

Tzu Yueh Chang^*, You Wei Cheng, Po-Tsung Lee

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The electrical properties of a device with an Al/Alq₃/ nanostructured MoO₃/Alq₃/p⁺-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO ₃ nanoclusterlike layer interposed between the Alq₃ thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO₃ nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.

Original language	English
Article number	043309
Journal	Applied Physics Letters
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.3299265
State	Published - 8 Feb 2010

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abstract = "The electrical properties of a device with an Al/Alq3/ nanostructured MoO3/Alq3/p+-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO 3 nanoclusterlike layer interposed between the Alq3 thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO3 nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.",

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AB - The electrical properties of a device with an Al/Alq3/ nanostructured MoO3/Alq3/p+-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO 3 nanoclusterlike layer interposed between the Alq3 thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO3 nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.

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