Abstract
Dysprosium oxide (Dy2O3) deposited by MBF on n-Si (100) was investigated. The electrical characteristics of the films seemed to depend on the annealing process after deposition. In the case of ex-situ O 2 RTA for 5 min, the accumulation capacitance in the C-V characteristic decreased by the interfacial layer growth. On the other hands, it was found that excellent C-V characteristics without decrease of accumulation capacitance were obtained by in-situ vacuum anneal.
Original language | English |
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Pages | 63-74 |
Number of pages | 12 |
State | Published - 2003 |
Event | Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002 |
Conference
Conference | Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues |
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Country | United States |
City | Salt Lake City, UT |
Period | 20/10/02 → 24/10/02 |