Electrical characteristics improvement of Dy2O3 thin films by in-situ vacuum anneal

Hiroyuki Yamamoto; Junichi Taguchi; Shun Ichiro Ohmi; Hiroshi Iwai

Electrical characteristics improvement of Dy₂O₃ thin films by in-situ vacuum anneal

Hiroyuki Yamamoto^*, Junichi Taguchi, Shun Ichiro Ohmi, Hiroshi Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

Dysprosium oxide (Dy₂O₃) deposited by MBF on n-Si (100) was investigated. The electrical characteristics of the films seemed to depend on the annealing process after deposition. In the case of ex-situ O ₂ RTA for 5 min, the accumulation capacitance in the C-V characteristic decreased by the interfacial layer growth. On the other hands, it was found that excellent C-V characteristics without decrease of accumulation capacitance were obtained by in-situ vacuum anneal.

Original language	English
Pages	63-74
Number of pages	12
State	Published - 2003
Event	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002

Conference

Conference	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
Country	United States
City	Salt Lake City, UT
Period	20/10/02 → 24/10/02

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Yamamoto, H., Taguchi, J., Ohmi, S. I., & Iwai, H. (2003). Electrical characteristics improvement of Dy₂O₃ thin films by in-situ vacuum anneal. 63-74. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Yamamoto, Hiroyuki ; Taguchi, Junichi ; Ohmi, Shun Ichiro ; Iwai, Hiroshi. / Electrical characteristics improvement of Dy₂O₃ thin films by in-situ vacuum anneal. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.12 p.

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title = "Electrical characteristics improvement of Dy2O3 thin films by in-situ vacuum anneal",

abstract = "Dysprosium oxide (Dy2O3) deposited by MBF on n-Si (100) was investigated. The electrical characteristics of the films seemed to depend on the annealing process after deposition. In the case of ex-situ O 2 RTA for 5 min, the accumulation capacitance in the C-V characteristic decreased by the interfacial layer growth. On the other hands, it was found that excellent C-V characteristics without decrease of accumulation capacitance were obtained by in-situ vacuum anneal.",

author = "Hiroyuki Yamamoto and Junichi Taguchi and Ohmi, {Shun Ichiro} and Hiroshi Iwai",

year = "2003",

language = "English",

pages = "63--74",

note = "null ; Conference date: 20-10-2002 Through 24-10-2002",

}

Yamamoto, H, Taguchi, J, Ohmi, SI & Iwai, H 2003, 'Electrical characteristics improvement of Dy₂O₃ thin films by in-situ vacuum anneal', Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States, 20/10/02 - 24/10/02 pp. 63-74.

Electrical characteristics improvement of Dy₂O₃ thin films by in-situ vacuum anneal. / Yamamoto, Hiroyuki; Taguchi, Junichi; Ohmi, Shun Ichiro; Iwai, Hiroshi.

2003. 63-74 Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Electrical characteristics improvement of Dy2O3 thin films by in-situ vacuum anneal

AU - Yamamoto, Hiroyuki

AU - Taguchi, Junichi

AU - Ohmi, Shun Ichiro

AU - Iwai, Hiroshi

PY - 2003

Y1 - 2003

N2 - Dysprosium oxide (Dy2O3) deposited by MBF on n-Si (100) was investigated. The electrical characteristics of the films seemed to depend on the annealing process after deposition. In the case of ex-situ O 2 RTA for 5 min, the accumulation capacitance in the C-V characteristic decreased by the interfacial layer growth. On the other hands, it was found that excellent C-V characteristics without decrease of accumulation capacitance were obtained by in-situ vacuum anneal.

AB - Dysprosium oxide (Dy2O3) deposited by MBF on n-Si (100) was investigated. The electrical characteristics of the films seemed to depend on the annealing process after deposition. In the case of ex-situ O 2 RTA for 5 min, the accumulation capacitance in the C-V characteristic decreased by the interfacial layer growth. On the other hands, it was found that excellent C-V characteristics without decrease of accumulation capacitance were obtained by in-situ vacuum anneal.

UR - http://www.scopus.com/inward/record.url?scp=8744238364&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:8744238364

SP - 63

EP - 74

Y2 - 20 October 2002 through 24 October 2002

ER -

Yamamoto H, Taguchi J, Ohmi SI, Iwai H. Electrical characteristics improvement of Dy₂O₃ thin films by in-situ vacuum anneal. 2003. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Electrical characteristics improvement of Dy2O3 thin films by in-situ vacuum anneal

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Electrical characteristics improvement of Dy₂O₃ thin films by in-situ vacuum anneal