Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors

Hui Wen Cheng, Yi-Ming Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this work we investigate the impact of the fin number and structure on device dc and dynamic behaviors of multi-fin field effect transistor (FET) circuits. Based on the same channel volume, multi-fin FETs with different fin aspect ratio (AR ≡ fin height/fin width) are explored using an experimentally validated three-dimensional device simulation. The multi-fin FinFET (AR = 2) has a better channel controllability than the tri-gate (AR = 1) and the quasi-planar (AR = 0.5) FETs. Besides, the 6T SRAM with triple-fin FinFETs provides the largest static noise margin because of the largest transconductance. Notably, though the FinFETs are with a large effective fin width and driving current, the larger gate capacitance may limit the intrinsic device gate delay. The transient characteristics of multi-fin inverters are further examined with different load capacitance (Cload). As C load is increased, the impact of the device intrinsic gate capacitance on transient characteristcs is decreased and the delay time compared with that of single-fin inverters is smaller due to being dominated by the driving current of the transistor. Consequently, the multi-fin FinFET circuits exhibit a smallest delay time. The results of the study provide an insight into the dc and transient characteristics of multi-fin transistors and associated digital circuits.

Original languageAmerican English
Article number115021
JournalSemiconductor Science and Technology
Volume24
Issue number11
DOIs
StatePublished - 27 Oct 2009

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