Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

Xiongfei Yu, Chunxiang Zhu*, M. F. Li, Albert Chin, A. Y. Du, W. D. Wang, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Fingerprint Dive into the research topics of 'Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate'. Together they form a unique fingerprint.

Physics & Astronomy