Electrical characteristic of InGaAs multiple-gate MOSFET devices

Cheng Hao Huang, Yi-ming Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, we study the impact of channel fin width (Wfin) and fin height (Hfin) on III-V multiple-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). We numerically simulated the output and transfer characteristics and the short-channel effect (SCE) of 14-nm InGaAs triple-gate MOSFETs by using an experimentally validated simulation. The engineering findings of this study indicate that devices with Wfin = 10 nm and Hfin between 14 and 21 nm possess optimal characteristic owing to a tradeoff between the drain-induced barrier lowing and subthreshld property. The effects of channel resistance, effective width, and quantum confinement resulting from the Hfin-dependent small energy band gap channel film on device characteristic are further estimated and discussed.

Original languageEnglish
Title of host publication2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages357-360
Number of pages4
ISBN (Electronic)9781467378581
DOIs
StatePublished - 5 Oct 2015
Event20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 - Washington, United States
Duration: 9 Sep 201511 Sep 2015

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2015-October

Conference

Conference20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
CountryUnited States
CityWashington
Period9/09/1511/09/15

Keywords

  • fin height (H)
  • fin width (W)
  • III-V
  • InGaAs
  • metal-oxide-semiconductor field-effect transistor (MOSFET)
  • multiple-gate
  • quantum confinement
  • short-channel effects (SCEs)

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