Electrical characteristic fluctuations in 16 nm bulk-FinFET devices

Yiming Li*, Chih Hong Hwang

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

In this paper, we for the first time study the characteristic fluctuations in 16nm bulk FinFETs. The random-dopant-number- and random-dopant-position-induced fluctuations for different characteristics including the on/off state currents, the threshold voltage, the drain-induced barrier lowering (DIBL), and the subthreshold swing (SS) are explored by a three-dimensional (3D) large scale statistical device simulation technique. This study provides us an insight into the problem of fluctuation. Thus, mechanism of immunity against fluctuation in 16nm bulk FinFET then could be examined, compared with the result of planar device.

Original languageEnglish
Pages (from-to)2093-2096
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
StatePublished - Sep 2007

Keywords

  • Bulk-FinFET
  • Fluctuation
  • Modeling and Simulation
  • Nanoscale transistor
  • Random dopant

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