Electrical characteristic fluctuation of 16 nm MOSFETs induced by random dopants and interface traps

Hui Wen Cheng*, Yung Yueh Chiu, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this paper, we estimate the influences of random dopants (RDs) and interface traps (ITs) using experimentally calibrated 3D device simulation on electrical characteristics of high-κ / metal gate CMOS devices. Statistically random devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the device channel are simulated. Fluctuations of threshold voltage and on-/off-state current for devices with different effective oxide thickness of insulator film are analyzed and discussed. The engineering findings significantly indicate that RDs and ITs govern characteristics, respectively, are statistically correlate to each other and RDs dominate device's variability, compared with the influence of ITs; however, the influence degree varies with IT's number, density and position. The effect of RDs and ITs on device characteristic should be considered together properly. Notably, the position of ITs and RDs results in very different fluctuation in spite of the same number of ITs and RDs.

Original languageEnglish
Title of host publication2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011
DOIs
StatePublished - 2011
Event2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 - Kaohsiung, Taiwan
Duration: 2 May 20114 May 2011

Publication series

Name2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011

Conference

Conference2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011
CountryTaiwan
CityKaohsiung
Period2/05/114/05/11

Keywords

  • 16 nm gate
  • 2D interface traps
  • 3D device simulation
  • Fluctuation
  • High-κ/metal gate
  • Interface trap
  • MOSFET
  • Random dopant
  • Random energy
  • Random number
  • Random position
  • Threshold voltage fluctuation

Fingerprint Dive into the research topics of 'Electrical characteristic fluctuation of 16 nm MOSFETs induced by random dopants and interface traps'. Together they form a unique fingerprint.

  • Cite this

    Cheng, H. W., Chiu, Y. Y., & Li, Y. (2011). Electrical characteristic fluctuation of 16 nm MOSFETs induced by random dopants and interface traps. In 2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 [5783187] (2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011). https://doi.org/10.1109/ICICDT.2011.5783187