Electrical characteristic fluctuation and suppression in emerging CMOS device and circuit

Hui Wen Cheng*, Ming Hung Han, Yiming Li, Kuo Fu Lee, Chun Yen Yiu, Thet Thet Khaing

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study the characteristic variability in high-κ metal-gate CMOS device and circuit induced by various intrinsicfluctuation sources. Using an experimentally calibrated 3D device-and-circuit coupled simulation; we estimate the effect of metal-gate work-function fluctuation, oxide-thickness fluctuation, process-variation effect, and random-dopant fluctuation on device DC/AC characteristics. We then predict their impacts on transfer and dynamic properties of digital and analog circuits. Finally, variability suppression techniques are demonstrated from device engineering viewpoints.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
StatePublished - 2010
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 13 Jun 201014 Jun 2010

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period13/06/1014/06/10

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