Electrical bistable memory device based on a poly(styrene- b -4-vinylpyridine) nanostructured diblock copolymer thin film

Ching Mao Huang, Yung Sheng Liu, Chen Chia Chen, Kung-Hwa Wei*, Jeng-Tzong Sheu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene- b -4-vinylpyridine) (PS- b -P4VP) diblock copolymer thin film. The Al/PS- b -P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2 × 105, an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 104 s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.

Original languageEnglish
Article number203303
JournalApplied Physics Letters
Volume93
Issue number20
DOIs
StatePublished - 2 Dec 2008

Fingerprint Dive into the research topics of 'Electrical bistable memory device based on a poly(styrene- b -4-vinylpyridine) nanostructured diblock copolymer thin film'. Together they form a unique fingerprint.

Cite this