Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers

Muhammad Musoddiq Jaafar, Poh Choon Ooi*, M. F. Mohd. Razip Wee, Muhammad Aniq Shazni Mohammad Haniff, Mohd Ambri Mohamed, Edward Yi Chang, Burhanuddin Yeop Majlis, Chang Fu Dee

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This study demonstrates the feasibility of all-solution-processed mean to fabricate carbon-based non-volatile memory (NVM). The NVM devices were fabricated on polyethylene terephthalate (PET) substrate using spin-coating and spray-coating techniques in the structure of silver nanowires (AgNWs)/graphene oxide (GO)/graphene quantum dots (GQDs)/graphene oxide (GO)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/PET. PEDOT:PSS was used as the bottom conductive layer and deposited by spin-coating method. GQDs were used as a charge trapping site in the structure and embedded in the two GO insulator layers. The AgNW metal electrode was formed on top of GO/GQDs/GO/PEDOT:PSS by the spray-coating method. The overall smooth surface morphology of the spray-coated films serves as good contact with the top metal electrode. The electrical characterization of the fabricated device shows the bistable current states with the ON/OFF ratio of 105. The NVM device can be programmed and erased multiple times. Various conduction mechanisms were proposed to describe the charge trapping process in GQD based on the obtained current–voltage measurement.

Original languageEnglish
JournalJournal of Materials Science: Materials in Electronics
DOIs
StateAccepted/In press - 1 Jan 2019

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