Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers

C. L. Sun, San-Yuan Chen*, M. Y. Yang, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3 V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al2O3 and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 × 10-7 A cm-2 at -2.5 V, which is low enough for deep sub-μm application.

Original languageEnglish
Pages (from-to)412-415
Number of pages4
JournalMaterials Chemistry and Physics
Volume78
Issue number2
DOIs
StatePublished - 17 Feb 2003

Keywords

  • Capacitance-voltage
  • Dielectric constant
  • PbTiO
  • Thin films

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