Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP

Wen Chih Yang; Chu Feng Chen; Kow-Ming Chang

doi:10.1109/EDSSC.2003.1283547

Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP

Wen Chih Yang, Chu Feng Chen, Kow-Ming Chang

National Chiao Tung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N₂/O₂ = 5/1 (slm) optimum mixed gas ambient. These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	349-352
Number of pages	4
ISBN (Electronic)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283547
State	Published - 1 Jan 2003
Event	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong Duration: 16 Dec 2003 → 18 Dec 2003

Publication series

Name	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country	Hong Kong
City	Tsimshatsui, Kowloon
Period	16/12/03 → 18/12/03

Access to Document

10.1109/EDSSC.2003.1283547

Link to publication in Scopus

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Yang, W. C., Chen, C. F., & Chang, K-M. (2003). Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 (pp. 349-352). [1283547] (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2003.1283547

Yang, Wen Chih ; Chen, Chu Feng ; Chang, Kow-Ming. / Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP. 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 349-352 (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003).

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abstract = "Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N2/O2 = 5/1 (slm) optimum mixed gas ambient. These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.",

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Yang, WC, Chen, CF & Chang, K-M 2003, Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283547, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Institute of Electrical and Electronics Engineers Inc., pp. 349-352, IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Tsimshatsui, Kowloon, Hong Kong, 16/12/03. https://doi.org/10.1109/EDSSC.2003.1283547

Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP. / Yang, Wen Chih; Chen, Chu Feng; Chang, Kow-Ming.

2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 349-352 1283547 (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N2/O2 = 5/1 (slm) optimum mixed gas ambient. These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.

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Yang WC, Chen CF, Chang K-M. Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 349-352. 1283547. (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003). https://doi.org/10.1109/EDSSC.2003.1283547