Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP

Wen Chih Yang, Chu Feng Chen, Kow-Ming Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N2/O2 = 5/1 (slm) optimum mixed gas ambient. These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.

Original languageEnglish
Title of host publication2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages349-352
Number of pages4
ISBN (Electronic)0780377494, 9780780377493
DOIs
StatePublished - 1 Jan 2003
EventIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong
Duration: 16 Dec 200318 Dec 2003

Publication series

Name2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
CountryHong Kong
CityTsimshatsui, Kowloon
Period16/12/0318/12/03

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    Yang, W. C., Chen, C. F., & Chang, K-M. (2003). Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP. In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 (pp. 349-352). [1283547] (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2003.1283547