Electrical and optical response of a very high frequency AlGaAs/GaAs heterojunction bipolar transistor

M. Z. Martin*, F. K. Oshita, M. Matloubian, H. R. Fetterman, W. J. Ho, N. L. Wang, Mau-Chung Chang, D. Cheung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The current gain cutoff frequency of very high frequency AlGaAs/GaAs heterojunction bipolar transistors has been measured at 300 and at 20 K using the picosecond optoelectronic technique. These devices showed cutoff frequencies of 72 and 84 GHz at room temperature and at a fixture temperature of 20 K, respectively. Optical response measurements were also obtained at visible and infrared wavelengths. The visible optical response shows a FWHM of 14 and 9.5 ps at 300 and 20 K, respectively. The infrared (λ=850 nm) optical response, corresponding to deeper penetration, showed a FWHM significantly larger (≳50 ps) than the visible optical response.

Original languageEnglish
Pages (from-to)3847-3849
Number of pages3
JournalJournal of Applied Physics
Volume76
Issue number6
DOIs
StatePublished - 1 Dec 1994

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