Electrical and material stability of Orion™ CVD ultra low-k dielectric film for copper interconnection

Kuo Lung Fang, Bing-Yue Tsui, Chen Chi Yang, Mao Chieh Chen, Shyh Dar Lee, K. Beekmann, T. Wilby, K. Giles, S. Ishaq

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The electrical and material stability of a newly developed CVD ultra low-k dielectric material called Orion, is explored. It has a dielectric constant of less than 2.2 with excellent thermal stability up to 600°C. It shows very low leakage current of only 1 nA/cm2 at 2.5 MV/cm. Although both Al and Cu ions can be driven into Orion easily, no metal ions are observed in the Orion with a TaN gate. The Orion material also shows very good adhesion with TaN and oxide hardmask. The current transport mechanism and electrical reliability were investigated. Although weak dielectric polarization occurs under bias-temperature stress, Orion is a very promising material for next generation Cu-interconnect technology.

Original languageEnglish
Title of host publicationProceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages60-62
Number of pages3
ISBN (Electronic)0780372166, 9780780372160
DOIs
StatePublished - 1 Jan 2002
EventIEEE International Interconnect Technology Conference, IITC 2002 - Burlingame, United States
Duration: 3 Jun 20025 Jun 2002

Publication series

NameProceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Conference

ConferenceIEEE International Interconnect Technology Conference, IITC 2002
CountryUnited States
CityBurlingame
Period3/06/025/06/02

Fingerprint Dive into the research topics of 'Electrical and material stability of Orion™ CVD ultra low-k dielectric film for copper interconnection'. Together they form a unique fingerprint.

  • Cite this

    Fang, K. L., Tsui, B-Y., Yang, C. C., Chen, M. C., Lee, S. D., Beekmann, K., Wilby, T., Giles, K., & Ishaq, S. (2002). Electrical and material stability of Orion™ CVD ultra low-k dielectric film for copper interconnection. In Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002 (pp. 60-62). [1014887] (Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.2002.1014887