Electrical and dielectric properties of low-temperature crystallized Sr0.8Bi2.6Ta2O9+x thin films on Ir/SiO2/Si substrates

Hsiu Yu Chou, Teng-Ming Chen, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Ferroelectric thin films of bismuth layer structured compounds, Sr 0.8Bi2.6Ta2O9+x (SBT) were deposited onto Ir/SiO2/Si substrates using metal organic decomposition (MOD) method. The crystallization of the SBT thin films annealed at various temperatures was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The polarization (P) versus electric field (E) characteristics exhibited a systematic variation from linear to non-linear polarization (hysteresis) with an increase in the annealing temperature of the SBT films. The leakage current density and dielectric constant of the SBT films were also strongly dependent on the annealing temperature, which in turn determined the grain size, mean surface roughness and inter diffusion through interfacial layers. The lowest leakage current density of 10-9Acm-2 at 100 kVcm-1 was obtained for SBT thin film annealed at 450°C. The SBT thin films annealed at 650 and 700°C remained fatigue-free up to 1011 switching cycles.

Original languageEnglish
Pages (from-to)826-830
Number of pages5
JournalMaterials Chemistry and Physics
Issue number3
StatePublished - 20 Dec 2003


  • Electrical characterization
  • Ferroelectricity
  • Sol-gel growth
  • Thin films

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