Electrical and dielectric behavior of fluorite-like Sr0.8Bi 2.6Ta2O9 thin films pyrolyzed and thermally annealed at 450 °C

C. H. Huang, H. Y. Chou, C. W. Lian, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this paper, we present the results of the fabrication and characterization of fluorite-like Sr0.8Bi2.6Ta 2O9 (SBT) thin films spin-coated on Ir (50 nm)/SiO 2 (100 nm)/p-type (1 0 0)Si substrates using the metal-organic decomposition (MOD) technique. The SBT films prepared at 450 °C under various annealing times were characterized by X-ray diffraction (XRD) as fluorite phase. The polarization versus electric field (P-E) behavior of SBT thin films pyrolyzed and annealed at 450 °C for 60min was linear with dielectric constant of 100. The 450 °C annealed films have the leakage current density of about 4 × 10-8A/cm2 at 200 kV/cm. The dependence of cumulative failure on dielectric breakdown field and time-dependent dielectric breakdown studies for these paraelectric SBT films indicated that the longer the annealing time, the better the breakdown field, whereas the film with no annealing treatment had a lifetime of over 10 years on operation at the electric field of 0.8 MV/cm.

Original languageEnglish
Pages (from-to)345-349
Number of pages5
JournalMaterials Chemistry and Physics
Issue number2-3
StatePublished - 15 Feb 2004


  • Dielectric properties
  • Electrical characterization
  • MOD
  • Thin film

Fingerprint Dive into the research topics of 'Electrical and dielectric behavior of fluorite-like Sr<sub>0.8</sub>Bi <sub>2.6</sub>Ta<sub>2</sub>O<sub>9</sub> thin films pyrolyzed and thermally annealed at 450 °C'. Together they form a unique fingerprint.

Cite this