Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs with AlN Passivation Layer and NH3 Postremote Plasma Treatment

Po Chun Chang, Quang Ho Luc, Yueh Chin Lin, Shih Chien Liu, Yen Ku Lin, Simon M. Sze, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We report a notable improvement in performance, electron transport, and reliability of HfO2/In0.53Ga0.47As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH3 postremote plasma treatment (PRPT). The interface state density Dit decreased by approximately one order of magnitude from 6.1×1012 to 4×1011 cm?2eV?1, and the border trap density Nbt also declined ten times from 2.8×1019 to 2.7×1018 cm?3, resulting in the reduction of the accumulation frequency dispersion and eliminate the inversion hump in C-V characteristics, and thus improves the device performances. Furthermore, positive bias temperature instability stress indicates that the sample with the AlN IPL and NH3 PRPT is more reliable than the sample without any IPL and plasma treatment. During PBT stress, a smaller threshold voltage shift and less transconductance degradation were observed for the sample with the AlN IPL and NH3 PRPT. In addition, the maximum overdrive voltage for a tenyear operating lifetime increased from 0.19 to 0.41 V.

Original languageEnglish
Article number7534745
Pages (from-to)3466-3472
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume63
Issue number9
DOIs
StatePublished - 1 Sep 2016

Keywords

  • AlN
  • high-\kappa dielectric
  • InGaAs MOSFET
  • interfacial passivation layer (IPL)
  • NH3 plasma treatment
  • plasma-enhanced atomic layer deposition (PEALD)

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