Electric stress effect on DC-RF performance degradation of 0.18-μm MOSFETs

C. C. Chen*, H. L. Kao, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We have studied the electric stress effect on DC-RF performance degradation of 64 gate fingers 0.18-μm RF MOSFETs. The fresh devices show good transistor's DC to RF characteristics of small sub-threshold swing of 85 mV/dec, large drive current (Id.sat) of 500 μA/μm, high unity-gain cut-off frequency (ft) of 47 GHz, and low minimum noise figure (NFmin) of 1.3 dB at 10 GHz. The hot carrier stress for 20% I d.sat reduction causes DC gm and ro degradation as well as the lower RF current gain by 2.35 dB, f, reduction to 35.7 GHz, increasing NFminto 1.7 dB at 10 GHz and poor output impedance matching.

Original languageEnglish
Pages (from-to)1916-1919
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume48
Issue number10
DOIs
StatePublished - 1 Oct 2006

Keywords

  • Current gain
  • I-V
  • NF
  • S parameters
  • Stress

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