Electric field induced nitride trapped charge lateral migration in a SONOS flash memory

Yu Heng Liu*, Cheng Min Jiang, Wei Chun Chen, Ta-Hui Wang, Wen Jer Tsai, Tao Cheng Lu, Kuang Chao Chen, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We investigated electric field-induced trapped electron lateral migration in a SONOS flash cell. The threshold voltage shift (Δ Vt) and gate-induced drain leakage (GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used to monitor trapped charge lateral migration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.

Original languageEnglish
Article number7762773
Pages (from-to)48-51
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number1
DOIs
StatePublished - 1 Jan 2017

Keywords

  • Electron lateral migration
  • SONOS
  • thermally assisted tunneling

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    Liu, Y. H., Jiang, C. M., Chen, W. C., Wang, T-H., Tsai, W. J., Lu, T. C., Chen, K. C., & Lu, C. Y. (2017). Electric field induced nitride trapped charge lateral migration in a SONOS flash memory. IEEE Electron Device Letters, 38(1), 48-51. [7762773]. https://doi.org/10.1109/LED.2016.2633545