Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition

Jiwei Zhai*, Xi Yao, Zhengkui Xu, H. D. Chen

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Ferroelectric Pb(Zr,Ti)O3 thin films were deposited by metalorganic chemical vapor deposition (MOCVD) on LaNiO3-buffered Pt/Ti/SiO2/Si substrates. The highly (100)-oriented LaNiO3 buffer layer facilitated the formation of high quality PZT films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO2/Si substrates. Thickness dependence of the ferroelectric properties has been observed with thickness ranging from 25 nm to 200 nm. Ferroelectric properties of PZT with different thickness, in its initial state and after voltage cycling that causes polarization fatigue, is studied by C-F and I-V measurements. The experiments revealed thickness dependence of the ferroelectric properties of both fatigued and unfatigued PZT films.

Original languageEnglish
Pages (from-to)47-54
Number of pages8
JournalIntegrated Ferroelectrics
Volume75
DOIs
StatePublished - 1 Dec 2005
EventSeventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China
Duration: 17 Apr 200520 Apr 2005

Keywords

  • Fatigue
  • Ferroelectric properties
  • PZT thin film
  • Thinckness

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