Ferroelectric Pb(Zr,Ti)O3 thin films were deposited by metalorganic chemical vapor deposition (MOCVD) on LaNiO3-buffered Pt/Ti/SiO2/Si substrates. The highly (100)-oriented LaNiO3 buffer layer facilitated the formation of high quality PZT films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO2/Si substrates. Thickness dependence of the ferroelectric properties has been observed with thickness ranging from 25 nm to 200 nm. Ferroelectric properties of PZT with different thickness, in its initial state and after voltage cycling that causes polarization fatigue, is studied by C-F and I-V measurements. The experiments revealed thickness dependence of the ferroelectric properties of both fatigued and unfatigued PZT films.
|Number of pages||8|
|State||Published - 1 Dec 2005|
|Event||Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China|
Duration: 17 Apr 2005 → 20 Apr 2005
- Ferroelectric properties
- PZT thin film