Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Jiwei Zhai; H. D. Chen

doi:10.1063/1.1594843

Electric fatigue in Pb(Nb,Zr,Sn,Ti)O₃ thin films grown by a sol-gel process

Jiwei Zhai, H. D. Chen^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Electric fatigue in Pb(Nb,Zr,Sn,Ti)O₃ thin films grown by sol-gel process was investigated. Films were grown on LaNiO ₃-buffered Pt/Ti/SiO₂/Si substrates. It was found that with an increase in cycling field, the remanent polarization increased. Fatigue properties of the films were closely related to the nonuniform strain buildup due to switching.

Original language	English
Pages (from-to)	978-980
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1594843
State	Published - 4 Aug 2003

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abstract = "Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by sol-gel process was investigated. Films were grown on LaNiO 3-buffered Pt/Ti/SiO2/Si substrates. It was found that with an increase in cycling field, the remanent polarization increased. Fatigue properties of the films were closely related to the nonuniform strain buildup due to switching.",

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Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Abstract

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Electric fatigue in Pb(Nb,Zr,Sn,Ti)O₃ thin films grown by a sol-gel process