Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology

Chau Neng Wu*, Ming-Dou Ker, T. L. Yu, S. T. Lin, K. L. Young, K. Y. Chiu

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

A well-coupled field-oxide device (WCFOD) has been proposed to effectively improve ESD robustness of output buffers in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of the field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. A 0.5-μm high-speed 256 K SRAM product had been fabricated with this WCFOD to practically verify the excellent efficiency for output ESD protection. The HBM ESD failure voltage of this SRAM product has been improved up to above 6.5 KV without using any extra ESD-modification process, whereas the original output buffer just can sustain the HBM ESD stress of 1 KV only.

Original languageEnglish
Pages40-44
Number of pages5
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
Duration: 3 Jun 19975 Jun 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, China
Period3/06/975/06/97

Fingerprint Dive into the research topics of 'Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology'. Together they form a unique fingerprint.

  • Cite this

    Wu, C. N., Ker, M-D., Yu, T. L., Lin, S. T., Young, K. L., & Chiu, K. Y. (1997). Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology. 40-44. Paper presented at Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications, Taipei, China, . https://doi.org/10.1109/VTSA.1997.614723