Efficient outdiffusion of hydrogen from Mg-doped nitrides by NF 3 annealing

Kenji Orita*, Masao Kawaguchi, Yasutoshi Kawaguchi, Shinichi Takigawa, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

High concentration (more than 1 × 10 18 cm -3) of hydrogen atoms remaining in Mg-doped GaN epitaxial layers grown by metalorganic chemical vapor deposition even after conventional annealing in N 2 ambient could induce degradation in GaN-based devices containing Mg-doped layers. In this study, by annealing Mg-doped nitrides in NF 3 ambient, we successfully reduced residual hydrogen below mid-10 17 cm -3, which is much smaller than by N 2 annealing. NF 3 annealing enhances outdiffusion of hydrogen from the bulk, which is possibly because the nitrogen and fluorine radicals decomposed from NF 3 accelerate desorption of hydrogen adatoms from the surface. The proposed method for Mg activation would improve the reliability of GaN-based light-emitting diodes and laser diodes.

Original languageEnglish
Pages (from-to)538-544
Number of pages7
JournalJournal of Electronic Materials
Volume38
Issue number4
DOIs
StatePublished - 1 Apr 2009

Keywords

  • Acceptor activation
  • Annealing ambient
  • GaN
  • Hydrogen
  • Magnesium
  • NF

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