We report the feasibility and effectiveness of short voltage stress for oxide defect screen in this paper. Wafer-level in-process voltage stress rather than post-process burn-in may be necessary for defect screening, so that all the thin oxides can be accessed and higher voltage may be used to accelerate the burn-in. Oxide breakdown theory has been successfully used to model this defect control method.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1994|
|Event||Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 11 Dec 1994 → 14 Dec 1994