Efficient far-infrared thermal bremsstrahlung radiation from a heterojunction bipolar transistor

Pei Kang Chung, Shun-Tung Yen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate the far-infrared thermal radiation properties of a heterojunction bipolar transistor. The device conveniently provides a high electric field for electrons to heat the lattice and the electron gas in a background with ions embedded. Because of very high effective temperature of the electron gas in the collector, the electron-ion bremsstrahlung makes efficient the thermal radiation in the far-infrared region. The transistor can yield a radiation power of 0.1 mW with the spectral region between 2 and 75 THz and a power conversion efficiency of 6×10-4. Such output contains a power of 20μW in the low-frequency part (2-20 THz) of the spectrum.

Original languageEnglish
Article number083102
JournalJournal of Applied Physics
Volume118
Issue number8
DOIs
StatePublished - 28 Aug 2015

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