Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

D. U. Li*, Chia-Ming Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 μm SiGe BiCMOS process could output 9 Vpp differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W.

Original languageEnglish
Pages (from-to)126-127
Number of pages2
JournalElectronics Letters
Volume41
Issue number3
DOIs
StatePublished - 3 Feb 2005

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