Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H2 in the GaN cap layer

Wei Chih Lai, Ya Yu Yang, Ray-Hua Horng

Research output: Contribution to journalArticle

Abstract

The thick-well InGaN/GaN short period multiple quantum well solar cells (SCs) with H2 in the GaN cap layer exhibits an improved open-circuit voltage, fill factor, and conversion efficiency η compared with those of SCs without the ramped H2 in the GaN cap layer. The η of the SC with the ramped H2 in the GaN cap layer (0.77%) shows a 67.4% improvement compared with that of the SC without the ramped H2 (0.46%). Furthermore, the η of SC with patterned sapphire substrate (PSS) (1.36%) indicates a 76.6% improvement compared with that of SC without PSS (0.77%).

Original languageEnglish
Article number6542659
Pages (from-to)953-956
Number of pages4
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number12
DOIs
StatePublished - 2 Dec 2013

Keywords

  • GaN-based solar cells (SCs)
  • Short-period (SP) InGaN/GaN multiple-quantum well (MQW)

Fingerprint Dive into the research topics of 'Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H<sub>2</sub> in the GaN cap layer'. Together they form a unique fingerprint.

Cite this