Efficiency improvement of GaN-based LEDs with a SiO 2 nanorod array and a patterned sapphire substrate

H. W. Huang, J. K. Huang, C. H. Lin, K. Y. Lee, H. W. Hsu, C. C. Yu, Hao-Chung Kuo

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a patterned sapphire substrate (PSS) and a SiO 2 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on transistor-outline-can package, the light output powers of LED with a PSS and LED with a PSS and a SiO 2 PQC structure are enhanced by 35% and 48%, compared with the conventional LED. In addition, the higher output power of the LED with a PSS and a SiO 2 PQC structure is due to better reflectance on PSS and higher epitaxial quality on an n-GaN using a SiO 2 12-fold PQC structure pattern. These results provide promising potential to increase output powers of commercial light-emitting devices.

Original languageEnglish
Article number5447653
Pages (from-to)582-584
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number6
DOIs
StatePublished - 1 Jun 2010

Keywords

  • Gallium nitride (GaN)
  • Light-emitting diodes (LEDs)
  • Nanoimprint lithography (NIL)
  • Patterned sapphire substrate (PSS)

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