Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Yu Lin Tsai, Chien-Chung Lin*, Hau Vei Han, Hsin Chu Chen, Kuo Ju Chen, Wei Chi Lai, Jin Kong Sheu, Fang I. Lai, Pei-Chen Yu, Hao-Chung Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ∼ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2% compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14%. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.

Original languageEnglish
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II
DOIs
StatePublished - 10 Jun 2013
Event2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
Duration: 3 Feb 20137 Feb 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8620
ISSN (Print)0277-786X

Conference

Conference2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
CountryUnited States
CitySan Francisco, CA
Period3/02/137/02/13

Keywords

  • InGaN multiple quantum well solar cells
  • anti-reflection
  • luminescent down shifting
  • quantum dots

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