Efficiency enhancement of GaN/InGaN vertical-injection light emitting diodes using distinctive indium-tin-oxide nanorods

C. S. Yang, Peichen Yu, C. H. Chiu, C. H. Chang, H. C. Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibit enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350mA.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference, IQEC 2009
PublisherOptical Society of America (OSA)
ISBN (Print)9781557528698
DOIs
StatePublished - 2009
EventInternational Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States
Duration: 31 May 20095 Jun 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceInternational Quantum Electronics Conference, IQEC 2009
CountryUnited States
CityBaltimore, MD
Period31/05/095/06/09

Fingerprint Dive into the research topics of 'Efficiency enhancement of GaN/InGaN vertical-injection light emitting diodes using distinctive indium-tin-oxide nanorods'. Together they form a unique fingerprint.

  • Cite this

    Yang, C. S., Yu, P., Chiu, C. H., Chang, C. H., & Kuo, H. C. (2009). Efficiency enhancement of GaN/InGaN vertical-injection light emitting diodes using distinctive indium-tin-oxide nanorods. In International Quantum Electronics Conference, IQEC 2009 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo.2009.jwa77