Efficiency enhancement of gaas photovoltaics employing antireflective indium tin oxide nanocolumns

Pei-Chen Yu; Chia Hua Chang; Ching Hua Chiu; Chin Sheng Yang; Jue Chin Yu; Hao-Chung Kuo; Shih Hsin Hsu; Yia Chung Chang

doi:10.1002/adma.200802563

Efficiency enhancement of gaas photovoltaics employing antireflective indium tin oxide nanocolumns

Pei-Chen Yu^*, Chia Hua Chang, Ching Hua Chiu, Chin Sheng Yang, Jue Chin Yu, Hao-Chung Kuo, Shih Hsin Hsu, Yia Chung Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

159 Scopus citations

Abstract

A study was conducted to demonstrate the application of indium tin oxide (ITO) nanocolumns as a conductive antireflection (AR) coating layer for GaAs solar cells. Characteristic ITO nanocolumns, prepared by glancing-angle deposition with an incident nitrogen flux offered omni-directional and broad-band AR properties for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis (RCWA) method indicated that the superior AR characteristics arose from the tapered column profiles, which collectively functioned as a graded-refractive-index layer. It was observed that the conversion efficiency of the GaAs solar cell with the nanocolumn AR layer increases by 28% as compared to a cell without any AR treatment. It was also observed that around 42% enhancement was achieved for photocurrents generated at wavelengths that were transparent to the window layer.

Original language	English
Pages (from-to)	1618-1621
Number of pages	4
Journal	Advanced Materials
Volume	21
Issue number	16
DOIs	https://doi.org/10.1002/adma.200802563
State	Published - 27 Apr 2009

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title = "Efficiency enhancement of gaas photovoltaics employing antireflective indium tin oxide nanocolumns",

abstract = "A study was conducted to demonstrate the application of indium tin oxide (ITO) nanocolumns as a conductive antireflection (AR) coating layer for GaAs solar cells. Characteristic ITO nanocolumns, prepared by glancing-angle deposition with an incident nitrogen flux offered omni-directional and broad-band AR properties for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis (RCWA) method indicated that the superior AR characteristics arose from the tapered column profiles, which collectively functioned as a graded-refractive-index layer. It was observed that the conversion efficiency of the GaAs solar cell with the nanocolumn AR layer increases by 28% as compared to a cell without any AR treatment. It was also observed that around 42% enhancement was achieved for photocurrents generated at wavelengths that were transparent to the window layer.",

author = "Pei-Chen Yu and Chang, {Chia Hua} and Chiu, {Ching Hua} and Yang, {Chin Sheng} and Yu, {Jue Chin} and Hao-Chung Kuo and Hsu, {Shih Hsin} and Chang, {Yia Chung}",

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AU - Yu, Pei-Chen

AU - Chang, Chia Hua

AU - Chiu, Ching Hua

AU - Yang, Chin Sheng

AU - Yu, Jue Chin

AU - Kuo, Hao-Chung

AU - Hsu, Shih Hsin

AU - Chang, Yia Chung

PY - 2009/4/27

Y1 - 2009/4/27

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AB - A study was conducted to demonstrate the application of indium tin oxide (ITO) nanocolumns as a conductive antireflection (AR) coating layer for GaAs solar cells. Characteristic ITO nanocolumns, prepared by glancing-angle deposition with an incident nitrogen flux offered omni-directional and broad-band AR properties for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis (RCWA) method indicated that the superior AR characteristics arose from the tapered column profiles, which collectively functioned as a graded-refractive-index layer. It was observed that the conversion efficiency of the GaAs solar cell with the nanocolumn AR layer increases by 28% as compared to a cell without any AR treatment. It was also observed that around 42% enhancement was achieved for photocurrents generated at wavelengths that were transparent to the window layer.

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Efficiency enhancement of gaas photovoltaics employing antireflective indium tin oxide nanocolumns

Abstract

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