Efficiency enhancement InGaP/GaAs dual-junction solar cell with subwavelength antireflection nanorod arrays

Min An Tsai, Hsin Chu Chen, Ping Chen Tseng, Peichen Yu*, Chin Hua Chiu, Hao-Chung Kuo, Shiuan-Huei Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated utilizing broad-band and omnidirectional antireflection nanorod arrays. The nanorod arrays were fabricated by self-assembled Ni clusters, followed by inductively-coupled-plasma reactive ion etching. The conversion efficiency measured under one-sun air mass 1.5 global illuminations at room temperature was improved by 10.8%. The light absorption efficiencies of the top InGaP and bottom GaAs cells were also studied under the influence of nanorod arrays. The enhanced absorption efficiency was mostly contributed from the short wavelength absorption by top cell. Surface nanorod arrays served not only as broad-band omnidirectional antireflection layers but also scattering sources. The structure can be further optimized to obtain the maximum conversion efficiency

Original languageEnglish
Pages (from-to)10729-10732
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number12
DOIs
StatePublished - 1 Dec 2011

Keywords

  • InGaP/GaAs
  • Nanorod
  • Solar cell
  • Subwavelength antireflection

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