Efficiency droop reduction in InGaN/GaN Light-emitting diodes by graded-thickness multiple quantum wells

C. H. Wang*, W. T. Chang, S. P. Chang, J. C. Li, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

InGaN/GaN LED with graded-thickness MQWs has superior hole and radiative recombination distribution by simulation modeling, and electroluminescence spectrum reveals additional emission from the narrower wells. Output power and efficiency droop behavior are both improved.

Original languageEnglish
Title of host publication2011 Conference on Lasers and Electro-Optics
Subtitle of host publicationLaser Science to Photonic Applications, CLEO 2011
Number of pages2
DOIs
StatePublished - 1 Sep 2011
Event2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States
Duration: 1 May 20116 May 2011

Publication series

Name2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Conference

Conference2011 Conference on Lasers and Electro-Optics, CLEO 2011
CountryUnited States
CityBaltimore, MD
Period1/05/116/05/11

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