Efficiency droop of nitride-based light-emitting diodes

Chia Yen Huang, Hao-Chung Kuo

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Scopus citations

Abstract

Efficiency droop of nitride-based light emitting diodes (LED) was intensively studied for high-power applications. The origin of droops was attributed to many root causes, for example, carrier leakage, internal piezo-polarization field, Auger recombination, carrier delocalization, and thermal effects. The physical origins were modeled and visualized by various techniques, which will be described in detail in this chapter. Many droop alleviation strategies were proposed by an epitaxial layer structure optimization and device structure innovation, where many of them were widely applied in current commercial products.

Original languageEnglish
Title of host publicationHandbook of Solid-State Lighting and LEDs
PublisherCRC Press
Pages99-122
Number of pages24
ISBN (Electronic)9781498741422
ISBN (Print)9781498741415
StatePublished - 12 Jun 2017

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    Huang, C. Y., & Kuo, H-C. (2017). Efficiency droop of nitride-based light-emitting diodes. In Handbook of Solid-State Lighting and LEDs (pp. 99-122). CRC Press.