Efficiency droop improvement in InGaN/GaN light-emitting diodes by graded-composition electron blocking layer

C. H. Wang*, W. T. Chang, S. P. Chang, J. C. Li, Hao-Chung Kuo, Tien-Chang Lu, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

InGaN/GaN LED with a graded-composition electron blocking layer has superior hole injection and electron confinement by simulation. Experiment results demonstrated that such GEBL exhibited better electrical characteristics, and higher output power at high current density.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages940-941
Number of pages2
DOIs
StatePublished - 1 Dec 2011
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: 28 Aug 20111 Sep 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
CountryAustralia
CitySydney
Period28/08/111/09/11

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