Efficiency droop improvement in GaN-based light-emitting diodes by graded-composition electron blocking layer

C. H. Wang*, S. P. Chang, W. T. Chang, J. C. Li, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A graded-composition electron blocking layer (GEBL) with aluminum composition increasing along [0001] direction was designed for c-plane GaN-based light-emitting diodes (LEDs). The simulation results demonstrated that such GEBL can effectively enhance the capability of hole transportation across the EBL as well as the electron confinement. Consequently, the LED with GEBL grown by metal-organic chemical vapor deposition exhibited better electrical characteristics, and much higher output power at high current density, as compared to conventional LED. Meanwhile, the efficiency droop was reduced from 34% in conventional LED to only 4% from the maximum value at low injection current to 200 A/cm2.

Original languageEnglish
Title of host publicationEleventh International Conference on Solid State Lighting
Number of pages6
DOIs
StatePublished - Aug 2011
Event11th International Conference on Solid State Lighting - San Diego, CA, United States
Duration: 22 Aug 201124 Aug 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8123
ISSN (Print)0277-786X

Conference

Conference11th International Conference on Solid State Lighting
CountryUnited States
CitySan Diego, CA
Period22/08/1124/08/11

Keywords

  • efficiency droop
  • electron blocking layer
  • light-emitting diodes

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