GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.
- light-emitting diodes (LEDs)
- low indium composition