Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Cheng-Huang Kuo, Y. K. Fu, G. C. Chi, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

Original languageEnglish
Pages (from-to)391-395
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume46
Issue number3
DOIs
StatePublished - 1 Jan 2010

Keywords

  • InGaN-GaN
  • light-emitting diodes (LEDs)
  • localization
  • low indium composition

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