Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selective carrier distribution manipulation

Chao Hsun Wang, Shih Pang Chang, Pu Hsi Ku, Yu-Pin Lan, Chien-Chung Lin, Hao-Chung Kuo*, Tien-Chang Lu, Shing Chung Wang, Chun-Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities.

Original languageEnglish
Article number042101
Number of pages3
JournalApplied Physics Express
Volume5
Issue number4
DOIs
StatePublished - Apr 2012

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