Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks

Da Wei Lin*, Chia Yu Lee, Che Yu Liu, Hau Vei Han, Yu-Pin Lan, Chien-Chung Lin, Gou Chung Chi, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

This study presents the green InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) grown on a GaN nanorods template with SiO 2 nanomasks by metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth, microscale air voids were formed between nanorods and the threading dislocations were efficiently suppressed. The electroluminescence measurement reveals that the LEDs on nanorods template with SiO2 nanomasks suffer less quantum-confined Stark effect and exhibit higher light output power and lower efficiency droop at a high injection current as compared with conventional LEDs.

Original languageEnglish
Article number233104
JournalApplied Physics Letters
Volume101
Issue number23
DOIs
StatePublished - 3 Dec 2012

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