Effects of X-ray irradiation on the noise behavior of low-temperature polycrystalline silicon TFTs

S. Yeh, Y. H. Tai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the noise behaviors of the low-temperature polycrystalline-silicon (LTPS) thin film transistors (TFTs) after the X-ray irradiation is analyzed. The curve of noise in ampere (NiA) after irradiation coincides with the curve of drain current and is higher than that without irradiation. The noise behaviors of LTPS TFTs under X-ray irradiation will result in lower signal to noise ratio (SNR). Besides, it is found that the noise mechanism after X-ray irradiation is attributed to the mobility fluctuation.

Original languageEnglish
Title of host publication2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
EditorsYue Kuo
PublisherElectrochemical Society Inc.
Pages151-155
Number of pages5
Edition1
ISBN (Electronic)9781607688730
DOIs
StatePublished - 2019
Event7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 - Kyoto, Japan
Duration: 19 May 201923 May 2019

Publication series

NameECS Transactions
Number1
Volume90
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
CountryJapan
CityKyoto
Period19/05/1923/05/19

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    Yeh, S., & Tai, Y. H. (2019). Effects of X-ray irradiation on the noise behavior of low-temperature polycrystalline silicon TFTs. In Y. Kuo (Ed.), 2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 (1 ed., pp. 151-155). (ECS Transactions; Vol. 90, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/09001.0151ecst