Effects of X-ray Irradiation on the Noise Behavior of Amorphous Indium-Gallium-Zinc-Oxide TFTs

Ya-Hsiang Tai*, Shan Yeh, Zheng-Chi Chen, Ting-Chang Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, the response of low-frequency noise under and after the X-ray irradiation for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) is analyzed. With fixed irradiation dose, the noise stays the same regardless of the TFT under and after X-ray irradiation. The noise mechanism is analyzed to be mainly the carrier mobility fluctuation. The coincidence of the noise of TFTs under and after X-ray irradiation further confirms that there is no direct relation between X-ray irradiation and the noise behavior. The mechanism of the positive charge trapping in the oxide layer under X-ray for the threshold voltage (V-th) shift of the TFT does not affect its noise behavior. With more stable and larger SNR by 20 dB than low-temperature polycrystalline-silicon (LTPS) TFT, a-IGZO TFT is believed to be a more suitable device for applying to X-ray active pixel sensing circuits. (c) 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

Original languageEnglish
Article number027512
Number of pages4
JournalJournal of the Electrochemical Society
Volume167
Issue number2
DOIs
StatePublished - 17 Jan 2020

Keywords

  • LOW-FREQUENCY NOISE

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