Effects of wet chemical and trimethyl aluminum treatments on the interface properties in atomic layer deposition of Al2O3 on InAs

Hai Dang Trinh*, Edward Yi Chang, Yuen Yee Wong, Chih Chieh Yu, Chia Yuan Chang, Yueh Chin Lin, Hong Quan Nguyen, Binh Tinh Tran

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The reduction of native oxides on an InAs surface using various wet and dry chemical treatments, including hydrochloric acid (HCl) treatment, sulfide treatment, and in situ trimethyl aluminum (TMA) treatment before the atomic layer deposition (ALD) of Al2O3 on InAs is studied. X-ray photoelectron spectrum (XPS) results show that the effect of surface cleaning by TMA was apparent almost after the first pulse but that TMA cleaning is not as effective as wet chemical surface cleaning. The combination of wet chemical treatment and TMA pretreatment is the most effective method for InAs surface cleaning, as indicated by the XPS analysis. Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics on metal-oxide-semiconductor capacitance (MOSCAP) structures were also investigated to evaluate the Al 2O3/n-InAs interface quality after different surface treatments, and the results are consistent with the XPS analysis.

Original languageEnglish
Article number111201
JournalJapanese Journal of Applied Physics
Volume49
Issue number11
DOIs
StatePublished - 1 Nov 2010

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