Effects of rapid thermal annealing on optical properties of InGaN quantum dots grown by metalorganic chemical vapor deposition with a duration of SiNx treatment on an underlying GaN layer were investigated through temperature-dependent photoluminescence measurements.
|Title of host publication||International Quantum Electronics Conference 2005|
|Number of pages||2|
|State||Published - 1 Dec 2005|
|Name||IQEC, International Quantum Electronics Conference Proceedings|