Effects of thermal annealing on optical properties of InGaN quantum dots grown by metalorganic chemical vapor deposition

T. H. Hsueh*, M. Y. Tsai, T. C. Wang, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Effects of rapid thermal annealing on optical properties of InGaN quantum dots grown by metalorganic chemical vapor deposition with a duration of SiNx treatment on an underlying GaN layer were investigated through temperature-dependent photoluminescence measurements.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference 2005
Pages137-138
Number of pages2
DOIs
StatePublished - 1 Dec 2005

Publication series

NameIQEC, International Quantum Electronics Conference Proceedings
Volume2005

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