Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes

Gin Liang Chen*, Fu Chin Chang, Wang Cheng Chung, Bohr Ran Huang, Wen Hsiung Chen, Ming Chih Lee, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The thermal effects of Ni/Ta/n-GaN Schottky diodes have been investigated for the first time using current-voltage, X-ray photoemission spectroscopy and Auger electron spectroscopy (AES) methods. Their barrier height is found to increase monotonously with increasing annealing temperature up to 800°C. Preliminary results indicate that when a Ta intermediate layer is added into the Ni/GaN diodes, it can prevent the metal-semiconductor interdiffusion and Ni accumulation adjacent to GaN substrate to a large extent so that a more thermally stable device can be obtained.

Original languageEnglish
Pages (from-to)L255-L258
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number3 B
DOIs
StatePublished - 15 Mar 2001

Keywords

  • Auger electron spectroscopy
  • Ni/Ta/n-GaN

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    Chen, G. L., Chang, F. C., Chung, W. C., Huang, B. R., Chen, W. H., Lee, M. C., & Chen, W-K. (2001). Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodes. Japanese Journal of Applied Physics, Part 2: Letters, 40(3 B), L255-L258. https://doi.org/10.1143/JJAP.40.L255