Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

Cheng I. Lin*, Asif Islam Khan, Sayeef Salahuddin, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

80 Scopus citations

Abstract

We study the effects of the variation of ferroelectric material properties (thickness, polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs). Based on this, we propose the concept of conservative design of NCFETs, where any unintentional yet reasonable and simultaneous variation ( ∼ 3%) in ferroelectric parameters does not result in the emergence of hysteresis and causes only a reasonable variation in the ON-current (≤5%) and, within these constraints, the enhancement of ON-current due to the addition of the ferroelectric gate oxide, which is is maximized.

Original languageEnglish
Article number7386627
Pages (from-to)2197-2199
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume63
Issue number5
DOIs
StatePublished - 1 May 2016

Keywords

  • Ferroelectric
  • negative capacitance FET (NCFET)
  • sub-60 mV/decade.

Fingerprint Dive into the research topics of 'Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics'. Together they form a unique fingerprint.

Cite this