Effects of the inductively coupled plasma nitridation process on the reliability of HfAlOx thin films

Kow-Ming Chang*, B. Chen, M. Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

High-k dielectric such as Hf-based dielectric has been considered to be inevitable for 45-nm CMOSFET technology node. The incorporation of Al in Hf-based dielectrics has been proven as a solution to the problem about thermal stability. Moreover, there have been some researches which describe that the reliability of the high-k dielectrics could be improved by the nitridation process. In this study, we examine the effect of different inductively coupled plasma (ICP) nitridation processes on the reliability of HfAlOx thin films. The hysteresis, stress induced leakage current (SILC) and constant voltage stress (CVS) characteristics of the nitrided HfAlOx thin films were preformed to prove the improvement effect of the plasma nitridation. Based on our experimental results, the ICP nitridation process would be an effective technology to improve the reliability of HfAlOx thin films.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Pages387-397
Number of pages11
Edition6
DOIs
StatePublished - 1 Dec 2009
Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 5 Oct 20097 Oct 2009

Publication series

NameECS Transactions
Number6
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period5/10/097/10/09

Fingerprint Dive into the research topics of 'Effects of the inductively coupled plasma nitridation process on the reliability of HfAlO<sub>x</sub> thin films'. Together they form a unique fingerprint.

  • Cite this

    Chang, K-M., Chen, B., & Su, M. (2009). Effects of the inductively coupled plasma nitridation process on the reliability of HfAlOx thin films. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 387-397). (ECS Transactions; Vol. 25, No. 6). https://doi.org/10.1149/1.3206638