Effects of the field-edge transistor on SOI MOSFETs

Jian Chen, Ping Keung Ko, Chen-Ming Hu, R. Solomon, Tung Yi Chan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Width dependence of SIMOX SOI MOSFETs characteristics are studied. Drain current kinks and subthreshold current humps are found to be dependent on channel width and they are related to the physical shape of the SOI film. It is found that they are the results of thinning of SOI film edge due to LOCOS isolation. The shorter channel width devices are fully depleted while the longer channel width device are not fully depleted. A model is proposed to explain the effects of field-edge transistor in SOI MOSFET's.

Original languageEnglish
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages219-223
Number of pages5
ISBN (Electronic)078030036X, 9780780300361
DOIs
StatePublished - 1 Jan 1991
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
Duration: 22 May 199124 May 1991

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan
CityTaipei
Period22/05/9124/05/91

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