Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon

Chih Yuan Hou, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi2 precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi2 precipitates, and (3) the subsequent migration of NiSi2 precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress on the growth of NILC. It was found that tensile stress did not enhance NiSi 2 formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.

Original languageEnglish
Pages (from-to)7327-7331
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number10
DOIs
StatePublished - 11 Oct 2005

Keywords

  • Amorphous silicon
  • Crystalline silicon
  • Ni-metal-induced lateral crystallization
  • NILC
  • Polycrystalline Silicon
  • Tensile stress and thin-film transistor

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