Effects of temperature and defects on breakdown lifetime of thin SiO2 at very low voltages

Klaus F. Schuegraf*, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

32 Scopus citations

Abstract

This paper investigates the physics of voltage and temperature accelerated breakdown testing of silicon dioxide within the framework of an anode hole injection model which can predict low voltage (3.3 V and below) breakdown lifetime. The field acceleration rate is shown to be independent of temperature, while the reduction of oxide breakdown lifetime at increased temperature is due to the oxide's enhanced susceptibility to damage caused by the holes' transport through the oxide. This paper also investigates defect related breakdown, showing that defects can be mathematically modeled as effective thinning even for aggressively scaled oxides. The effective thickness statistic derived from ramp breakdown or high-field lifetime or charge-to-breakdown tests enables determination of the oxide integrity of a specific oxide technology. For 3.3 Volt operation, an oxide technology must provide an effective thickness of 44 angstroms; for 2.5 Volt operation, 34 angstroms.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages126-135
Number of pages10
ISBN (Print)0780313577
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 32nd Annual International Reliability Physics Proceedings - San Jose, CA, USA
Duration: 12 Apr 199414 Apr 1994

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 32nd Annual International Reliability Physics Proceedings
CitySan Jose, CA, USA
Period12/04/9414/04/94

Fingerprint Dive into the research topics of 'Effects of temperature and defects on breakdown lifetime of thin SiO2 at very low voltages'. Together they form a unique fingerprint.

Cite this